fn tunneling
基本解釋
- [電子、通信與自動控制技術(shù)]fn隧穿
英漢例句
- FN tunneling and hot hole (HH) stress induced leakage current (SILC) transient characteristics in thin gate oxide are investigated.
分別研究了FN隧穿應(yīng)力和熱空穴(HH)應(yīng)力導(dǎo)致的薄柵氧化層漏電流瞬態(tài)特性。 - With the rapid scaling down of MOS devices, the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.
隨著器件尺寸的迅速減小,直接隧穿電流將代替FN電流而成為影響器件可靠性的主要因素。 - In moderate field region, traps can be filled by both FN current and direct tunneling of electron into the traps. It results in a quasi-saturation in the leakage current.
在中等電場區(qū)域,注入電子能通過FN電流和直接隧穿到達(dá)能被填充的陷阱,從而使漏電流產(chǎn)生準(zhǔn)態(tài)飽和。
雙語例句
專業(yè)釋義
- fn隧穿