heteroepitaxy

常見例句

Heteroepitaxy of InP on GaAs Substrates Using Metamorphic Buffers and Strained Layer Superlattice[J].
引用該論文 Wang Qi;Ren Xiaomin;Huang Yongqing;Huang Hui;Cai Shiwei.
At present there exist two kinds of manufacturing met hods for silicon-based lasers,i.e.,heteroepitaxy and bonding.
目前制作硅基激光器的方法主要分為兩類，異質(zhì)結(jié)外延生長和異質(zhì)材料鍵合。
The themes of this thesis, heteroepitaxy and ion implantation, are two areas that have been very actively researched in the last two decades.
當元件尺度持續(xù)縮小至奈米尺度階段時，深入了解未來先進奈米元件中金屬薄膜與半導體基材間之界面反應是相當重要的一項課題。
This kind of technology provides an effective way to solve a troublesome lattice mismatch problem in the heteroepitaxy, which has the capability for improving device structure and characteristics.
這種技術(shù)解決了外延生長難以解決的晶格失配問題，為改善器件結(jié)構(gòu)及性能提供了巨大的潛力。
Advance of the GaAs/Si Heteroepitaxy
GaAs/Si異質(zhì)外延的新進展
Keywords Aluminm nitride;Wide band gap semiconductor;Heteroepitaxy;
氮化鋁;寬禁帶半導體;異質(zhì)外延;