misfit dislocation

基本解釋

The net stress is a driving force of misfit dislocation multiplication and is a very important factor for strained MQWs stability.
凈應(yīng)力是失配位錯(cuò)增殖的驅(qū)動(dòng)力，是應(yīng)變多量子阱穩(wěn)定的重要判據(jù)。
In the case of considering the misfit dislocation, relaxed lattice mismatch, the radius of curvature and density of misfit dislocation were calculated.
在考慮存在失配位錯(cuò)的情況下，計(jì)算了馳豫晶格失配、曲率半徑和失配位錯(cuò)密度。
The critical thickness is determined from the zero formation energy of a misfit dislocation. i. e. the amount of reduced mismatch strain energy equaling the amount of creased dislocation self energy.
利用位錯(cuò)形成能等于零（即錯(cuò)配應(yīng)變能的降低等于位錯(cuò)自能）的條件，得到了外延生長(zhǎng)薄膜的臨界厚度。
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失配位錯(cuò)
The enhancement on formation of misfit dislocation is related to the incidence position of adatom.
原子入射對(duì)外延薄膜失配位錯(cuò)形成的誘發(fā)作用與原子入射位置有關(guān)。
物理學(xué)
失配位錯(cuò)
Misfit strain energy (beyond critical thickness corresponding misfit) under thesame thin system have a crucial role to formation of misfit dislocation in the thinfilms.
同樣條件下的薄膜體系，薄膜中失配應(yīng)變能(超過(guò)了對(duì)應(yīng)失配度下的臨界厚度)對(duì)薄膜失配位錯(cuò)的形成起決定作用。
錯(cuò)配位錯(cuò)