retained dose

基本解釋

Lower impact energy and retained dose were found in inner surface PIII, but the former was not very serious, while the latter was.
通過模擬發(fā)現(xiàn)，內(nèi)表面注入過程存在注入能量和注入劑量偏低的問題，但前者并不十分嚴(yán)重，而后者則比較嚴(yán)重。
Distribution of peak implant depth and retained dose were greatly influenced by pulse duration, and long pulse moved the maximum values deeper into the bore.
脈沖寬度對(duì)注入峰值深度和注入劑量的分布有很大影響，長(zhǎng)注入脈寬使注入峰值深度和注入劑量的最大值向筒內(nèi)部移動(dòng)；
The deflecting electric field method we presented has been proved to be valid for inner surface PIII, and can increase retained dose and implant energy greatly.
研究表明，提出的偏轉(zhuǎn)電場(chǎng)法是進(jìn)行內(nèi)表面注入處理的有效方法，可以極大提高內(nèi)表面注入的注入劑量和注入能量。