IMPATT

基本解釋

• n.碰撞雪崩渡越時(shí)間二極琯

同根派生

• IMPATT相關(guān)詞

英漢例句

• The peak power output of pulsed IMPATT source of 3.2W at 1% duty cycle is achieved at 30.52GHz, frequency chirp during the bias pulse is less than 800MHz.
  振蕩源在30.;52GHz的頻率上;脈沖峰值功率爲(wèi)3
• The corresponding curves are given here. With these results in mind, 3-mm band P+NN+ IMPATT and 8-mm band P+PNN+ DDR avalanche devices have been designed and developed resulting in excellent performence.
  已利用這些結(jié)果設(shè)計(jì)和研制成3mm P~+NN~+崩越二極琯和8mmP~+PNN~+雙漂移崩越二極琯;獲得了良好性能.
• Analysis of Transit Angle of DDR IMPATT Diode
  雙漂移崩越二極琯的渡越角分析
• Thermal Resistance Measurement of IMPATT Diodes
  IMPATT二極琯熱阻測(cè)試
• J-BAND SILICON DDR IMPATT DEVICE
  J波段矽DDR IMPATT器件

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