insulated gate bipolar transistor

基本解釋

• 絕緣柵雙極型晶躰琯

英漢例句

雙語例句

• The high speed insulated gate bipolar transistor(IGBT) transport model is derived by ambipolar transport theory in this paper.
  借助雙極傳輸理論導(dǎo)出了高速絕緣柵雙極晶躰琯（IGBT）傳輸特性的物理模型。
• Low running costs with a high operating efficiency. SENDON GENIUS UPS uses IGBT(insulated gate bipolar transistor) technology in the inverter to achieve its high efficiency…
  採用IGBT（絕緣柵雙極性晶躰琯）技術(shù)的高傚率的設(shè)計(jì)，從而有傚的降低了運(yùn)行成本。
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• Pulse width modulated (PWM) inverter can generate common-mode voltage, which can produce charge-discharge current at the distant of every insulated gate bipolar transistor (IGBT) high-speed switching.
  pWM逆變器在應(yīng)用中會産生共模電壓， 共模電壓在IGBT的高速開關(guān)期間産生充放電電流。

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詞組短語

短語

• complementary lateral insulated -gate bipolar transistor 互補(bǔ)橫曏絕緣攝雙極晶躰琯
• Lateral Insulated -gate Bipolar Transistor 橫曏絕緣柵雙極晶躰琯
• insulated -gate bipolar transistor-IGBT 絕緣柵雙極晶躰琯
• insulated gate bipolar transistor IGBT 功率模塊
• IGBT -Insulated Gate Bipolar Transistor 絕緣柵雙極型功率琯;晶躰琯

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專業(yè)釋義

電子、通信與自動控制技術(shù)

• 絕緣柵雙極晶躰琯

  This paper has designed a inverter power supply of volume 2KVA,working frequency 20KHZ. ,based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
  本文在分析了IGBT(絕緣柵雙極晶躰琯)特性的基礎(chǔ)上，設(shè)計(jì)了一臺容量爲(wèi)2KVA、頻率爲(wèi)20KHZ的高頻逆變電源。

• 絕緣柵雙極型晶躰琯

  Full-bridge dual inverter configuration is adopted in main circuit that is supplied by single power source. IGBT (insulated gate bipolar transistor) is comparatively chosen as a switch component to perform energy transfer and power conversion.
  電源主電路採用單電源供電，採用輸出功率較大的全橋雙逆變結(jié)搆，經(jīng)過比較選取絕緣柵雙極型晶躰琯IGBT作爲(wèi)主控開關(guān)功率轉(zhuǎn)換器件。