mocvd

基本解釋

InN QDs grows with the use of MOCVD.
氮化銦量子點(diǎn)是利用有機(jī)金屬化學(xué)氣相沉積系統(tǒng)來(lái)成長(zhǎng)。
The membrane formed inside the porous of support by MOCVD process is resistant to hydrogen embrittlement.
由金屬有機(jī)氣相沈積法(MOCVD)在載躰孔內(nèi)沈積鈀膜有助於防止氫的脆化作用。
Recent advances in heteroepitaxial growth of high quality GaN films by MOCVD and HVPE is reviewed.
介紹了採(cǎi)用MOCVD或HVPE技術(shù)高質(zhì)量異質(zhì)外延生長(zhǎng)GaN薄膜的發(fā)展?fàn)顩r。
Based on these phenomena, the deposition mechanisms of the two-step MOCVD of Cu films can be determined.
由以上實(shí)騐可知本研究成功的建立一套新的銅制程中成長(zhǎng)晶種層之制程方法。
Several suggestions for further development of MOCVD materials in China were proposed.
爲(wèi)進(jìn)一步發(fā)展我國(guó)的MOCVD材料提出了若乾建議。