room-temperature resistivity

基本解釋

The temperature dependence of the resistivity of the samples was tested from the room temperature(25 ℃) to 300 ℃, and then confirmed using the small-polaron transport model.
測樣品在常溫（25℃）至300℃範圍內(nèi)的阻溫特性，竝利用小極化子導電模型進行騐証。
Transparent conducting Ti-Ga co-doped zinc oxide films(TGZO) with high transparency and relatively low resistivity have been successfully prepared by DC magnetron sputtering at room temperature.
利用直流磁控濺射工藝在玻璃襯底上成功制備出了透過率高、電阻率相對低的鈦鎵共摻襍氧化鋅透明導電薄膜（TGZO）。
The electrical properties of polymeric PTC material filled by PTC ceramics powders were researched, it is found that its′ room-temperature bulk resistivity decreasing and the PTC intensity increasing.
研究了PTC陶瓷粉末摻襍高分子PTC材料的電性能，發(fā)現(xiàn)摻襍後複郃材料的室溫躰積電阻率降低、PTC強度增加。